VUB145-16NOXT 3~ Brake Standard Rectifier Module Rectifier Chopper V = 1600 V V = 1200 V RRM CES I 150 A I 180 A = = DAV C25 A V I = 1100 V = 1.7 FSM CE(sat) 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB145-16NOXT Backside: isolated 24+25 29 30 45+46 NTC ~14+15 3 ~10+11 ~ 6+7 21+22 41 40 48+49 Features / Advantages: Applications: Package: E2-Pack Package with DCB ceramic 3~ Rectifier with brake unit Isolation Voltage: V~ 3600 Improved temperature and power cycling for drive inverters Industry standard outline Planar passivated chips RoHS compliant Very low forward voltage drop Soldering pins for PCB mounting Very low leakage current Height: 17 mm NTC Base plate: Copper X2PT - 2nd generation Xtreme light Punch Through internally DCB isolated Rugged X2PT design results in: Advanced power cycling - short circuit rated for 10 sec. Phase Change Material available - very low gate charge - low EMI - square RBSOA 2x Ic Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h 2019 IXYS all rights reservedVUB145-16NOXT Ratings Rectifier Symbol Definition Conditions min. typ. max. Unit T = 25C 1700 V V max. non-repetitive reverse blocking voltage RSM VJ T = 25C 1600 V V max. repetitive reverse blocking voltage RRM VJ reverse current I V = 1 6 0 0 V T = 25C 100 A R VJ R V = 1 6 0 0 V T = 1 5 0 C 2 mA R VJ forward voltage drop V I = 5 0 A T = 25C 1.20 V F F VJ I = 1 5 0 A 1.68 V F T = C 1.13 V I = 5 0 A 125 F VJ I = 1 5 0 A 1.74 V F bridge output current T = 1 0 5 C T = 1 5 0 C 150 A I DAV C VJ rectangular d = V T = 1 5 0 C 0.87 V threshold voltage F0 VJ for power loss calculation only slope resistance r 5.9 m F thermal resistance junction to case 0.5 K/W R thJC thermal resistance case to heatsink K/W R 0.1 thCH P total power dissipation T = 25C 250 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 1.10 kA I FSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.19 kA R t = 10 ms (50 Hz), sine T = 1 5 0 C A 935 VJ t = 8,3 ms (60 Hz), sine V = 0 V 1.01 kA R value for fusing It t = 10 ms (50 Hz), sine T = 45C 6.05 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 5.89 kAs R t = 10 ms (50 Hz), sine T = 1 5 0 C 4.37 kAs VJ t = 8,3 ms (60 Hz), sine V = 0 V 4.25 kAs R V = 4 0 0 V f = 1 MHz T = 25C 37 pF C junction capacitance J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191220h 2019 IXYS all rights reserved