VS-4EWH02FN-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 4 A FRED Pt FEATURES Hyperfast recovery time 2, 4 175 C max. operating junction temperature Output rectification freewheeling Low forward voltage drop reduced Q and sof t rr recovery 1 3 N/C Anode Low leakage current DPAK (TO-252AA) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS State of the art hyperfast recovery rectifiers specifically I 4 A F(AV) designed with optimized performance of forward voltage V 200 V drop and hyperfast recovery time. R The planar structure and the platinum doped life tim e V at I 0.71 V F F control guarantee the best overall performance, ruggedness t (typ.) 23 ns rr and reliability characteristics. T max. 175 C J These devices are intended for use in the output rectificatio n stage of SMPS, UPS, DC/DC converters as well as Package DPAK (TO-252AA) freewheeling diode in low voltage inverters and choppe r Circuit configuration Single motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I T = 164 C 4 F(AV) C Non-repetitive peak surge current I T = 25 C 80 A FSM J Peak repetitive forward current I T = 164 C, f = 20 kHz, d = 50 % 8 FM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 4 A - 0.87 0.95 F Forward voltage V F I = 4 A, T = 150 C - 0.71 0.80 F J V = V rated - - 3 R R Reverse leakage current I A R T = 150 C, V = V rated - 2 20 J R R Junction capacitance C V = 600 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 11-Apr-18 Document Number: 93258 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-4EWH02FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 23 27 F F R I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 24 - F F R Reverse recovery time t ns rr T = 25 C -20 - J T = 125 C - 27 - J I = 4 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.4 - J V = 160 V R T = 25 C - 20 - J Reverse recovery charge Q nC rr T = 125 C - 46 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R -2.73.2C/W thJC junction to case per leg 0.3 g Approximate weight 0.01 oz. Marking device Case style DPAK (TO-252AA) 4EWH02FN Revision: 11-Apr-18 Document Number: 93258 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000