Common Anode Silicon Dual Switching Diodes DAP222M3T5G These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SOT723 package which is designed for low power surface mount applications, where board space is at a premium. Features www.onsemi.com Fast t rr Low C ANODE D 3 Available in 4 mm Tape and Reel This is a PbFree Device MAXIMUM RATINGS (T = 25C) A Rating Symbol Value Unit 12 CATHODE Reverse Voltage V 80 V R Peak Reverse Voltage V 80 V RM MARKING DIAGRAM Forward Current I 100 mA F 3 THERMAL CHARACTERISTICS SOT723 P9 CASE 631AA Rating Symbol Max Unit STYLE 4 2 Power Dissipation P 260 mW D 1 Junction Temperature T 150 C J P9 = Specific Device Code Storage Temperature T 55 ~ +150 C stg M = Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. t = 1.0 S. Device Package Shipping DAP222M3T5G SOT723 8000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: April, 2021 Rev. 5 DAP222M3/D MDAP222M3T5G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I V = 70 V 0.1 A R R Forward Voltage V I = 100 mA 1.2 V F F Reverse Breakdown Voltage V I = 100 A 80 V R R Diode Capacitance C V = 6.0 V, f = 1.0 MHz 3.5 pF D R Reverse Recovery Time t I = 5.0 mA, V = 6.0 V, R = 100 , I = 0.1 I 4.0 ns rr F R L rr R (Note 2) 2. t Test Circuit for DAP222 in Figure 4. rr TYPICAL ELECTRICAL CHARACTERISTICS 100 100 150C 10 150C 125C 10 125C 1.0 85C 25C 40C 55C 1.0 0.1 55C 25C 0.01 0.1 0.001 0.01 0.0001 0.5 0.6 0.7 0.8 1.0 40 50 60 80 0.1 0.2 0.3 0.4 0.9 02100 30 70 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Reverse Current 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 5.0 10 15 20 25 V , REVERSE VOLTAGE (V) R Figure 3. Diode Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , DIODE CAPACITANCE (pF) D I , REVERSE CURRENT ( A) R