DB2441600L Panasonic

Doc No. TT4-EA-12393 Revision. 3 Product Standards Schottky Barrier Diode DB2441600L DB2441600L Silicon epitaxial planar type Unit: mm 2.4 0.15 For rectification 2 Features Low forward voltage VF Forward current (Average) IF(AV) = 3 A rectification is possible Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: 4P 1.75 0.85 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic TMiniP2-F2-B JEITA SC-110A Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 40 V Internal Connection *1 2 IF(AV) 3.0 A Forward current (Average) *2 IFSM 50 A Non-repetitive peak forward surge current Junction temperature Tj 125 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +125 C Note: *1 For embedded alumina substrate (substrate size: 5 cm 5 cm) 1 *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page 1of 4 Established : 2010-03-01 Revised : 2013-04-19 3.8 4.7Doc No. TT4-EA-12393 Revision. 3 Product Standards Schottky Barrier Diode DB2441600L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 3.0 A 0.40 0.45 V Reverse current IR VR = 40 V 60 300 A Terminal capacitance Ct VR = 10 V, f = 1 MHz 95 pF IF = IR = 100 mA *1 trr 30 ns Reverse recovery time Irr = 10 mA, RL = 100 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1 trr test circuit Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 10 mA rr t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA r R Pulse Generator Wave Form Analyzer = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Page 2of 4 Established : 2010-03-01 Revised : 2013-04-19