VS-MURB1620CTPbF, VS-MURB1620CT-1PbF www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 8 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base Base AEC-Q101 qualified common common cathode cathode Material categorization: for definitions of compliance 2 2 please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 12 3 12 3 MUR.. series are the state of the art ultrafast recovery Anode Common Anode Anode Common Anode rectifiers specifically designed with optimized performance 1 cathode 2 1 cathode 2 of forward voltage drop and ultrafast recovery time. VS-MURB1620CTPbFVS-MURB1620CT-1PbF The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY These devices are intended for use in the output rectification 2 Package TO-263AB (D PAK), TO-262AA stage of SMPS, UPS, DC/DC converters as well as I 2 x 8 A F(AV) freewheeling diode in low voltage inverters and chopper motor drives. V 200 V R Their extremely optimized stored charge and low recovery V at I 0.895 V F F current minimize the switching losses and reduce over t 35 ns rr dissipation in the switching element and snubbers. T max. 175 C J Diode variation Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 200 V RRM per leg 8.0 Average rectified forward current I F(AV) total device Rated V , T = 150 C 16 R C A Non-repetitive peak surge current per leg I 100 FSM Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 150 C 16 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 8 A - - 0.975 F Forward voltage V F I = 8 A, T = 150 C - - 0.895 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - - 250 J R R Junction capacitance C V = 200 V - 25 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 10-Jul-15 Document Number: 94519 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MURB1620CTPbF, VS-MURB1620CT-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 0.5 A, I = 1.0 A, I = 0.25 A - - 25 F R REC Reverse recovery time t ns rr T = 25 C -20 - J = 125 C - 34 - T J I = 8 A F T = 25 C - 1.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.2 - J V = 160 V R T = 25 C - 23 - J Reverse recovery charge Q nC rr T = 125 C - 75 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R --3.0 thJC junction to case per leg Thermal resistance, R -- 50 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style TO-263AB (D PAK) MURB1620CT Marking device Case style TO-262 MURB1620CT-1 Revision: 10-Jul-15 Document Number: 94519 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000