VS-MURB820HM3, VS-MURB820-1HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base AEC-Q101 qualified, meets JESD-201 cathode 2 class 1A thin whisker test 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 1 3 1 3 N/C Anode N/C Anode MUR.. series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance VS-MURB820HM3 VS-MURB820-1HM3 of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, PRODUCT SUMMARY ruggedness and reliability characteristics. 2 Package TO-263AB (D PAK), TO-262AA These devices are intended for use in the output rectification I 8 A F(AV) stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper V 200 V R motor drives. V at I 0.75 V F F Their extremely optimized stored charge and low recovery t 35 ns rr current minimize the switching losses and reduce over T max. 175 C dissipation in the switching element and snubbers. J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I Total device, rated V , T = 150 C 8 F(AV) R C Non-repetitive peak surge current I 100 A FSM Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 150 C 16 FM R C Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 8 A - 0.92 0.975 F Forward voltage V F I = 8 A, T = 150 C - 0.75 0.895 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - - 250 J R R Junction capacitance C V = 200 V - 25 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 08-Oct-15 Document Number: 95902 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MURB820HM3, VS-MURB820-1HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 0.5 A, I = 1.0 A, I = 0.25 A - - 25 F R REC Reverse recovery time t ns rr T = 25 C -20 - J = 125 C - 34 - T J I = 8 A F T = 25 C - 1.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.2 - J V = 160 V R T = 25 C - 23 - J Reverse recovery charge Q nC rr T = 125 C - 75 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -55 - 175 C J Stg storage temperature range Thermal resistance, R --3.0 thJC junction to case Thermal resistance, R -- 50 C/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style TO-263AB (D PAK) MURB820H Marking device Case style TO-262AA MURB820-1H 100 100 T = 175 C J 10 T = 150 C J 10 T = 125 C J 1 T = 100 C J T = 175 C J 0.1 T = 150 C J 1 T = 25 C J 0.01 T = 25 C J 0.1 0.001 0 50 100 150 200 250 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 08-Oct-15 Document Number: 95902 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R