VS-MURD620CTHM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode Ultrafast recovery time 4 Low forward voltage drop Low leakage current 175 C operating junction temperature AEC-Q101 qualified 2 Common Meets JESD 201 class 2 whisker test cathode DPAK (TO-252AA) 13 Meets MSL level 1, per J-STD-020, Anode Anode LF maximum peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS I 2 x 3 A F(AV) VS-MURD620CTHM3 is the state of the art ultrafast V 200 V recovery rectifier specifically designed with optimized R performance of forward voltage drop and ultrafast recovery V at I 0.9 V F F time. t typ. See Recovery table rr The planar structure and the platinum doped life tim e T max. 175 C J control, guarantee the best overall performance, ruggedness and reliability characteristics. Package DPAK (TO-252AA) These devices are intended for use in the output rectificatio n Circuit configuration Common cathode stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and choppe r motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current per device I Total device, rated V , T = 146 C 6 F(AV) R C Non-repetitive peak surge current I 50 A FSM Peak repetitive forward current per diode I Rated V , square wave, 20 kHz, T = 146 C 6 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 3 A - 0.9 1.0 F V I = 3 A, T = 125 C - 0.78 0.96 F J Forward voltage V F I = 6 A - 1 1.2 F I = 6 A, T = 125 C - 0.89 1.13 F J V = V rated - - 5 R R Reverse leakage current I A R T = 125 C, V = V rated - - 250 J R R Junction capacitance C V = 200 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 09-Dec-2019 Document Number: 94742 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MURD620CTHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 20 35 F F R Reverse recovery time t T = 25 C -19 - ns rr J T = 125 C - 26 - J I = 3 A T = 25 C F - 3.1 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.6 - J V = 160 V R T = 25 C - 30 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R --9.0 thJC junction to case per leg Thermal resistance, R -- 80 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth, and R --- thCS case to heatsink greased -0.3 - g Weight -0.01 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style DPAK (TO-252AA) MURD620CTH Revision: 09-Dec-2019 Document Number: 94742 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000