VSMY12850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES Package type: surface mount Package form: top view Dimensions (L x W x H in mm): 3.2 x 1.6 x 1.1 Peak wavelength: = 850 nm p High reliability High radiant power Very high radiant intensity Angle of half intensity: = 40 Suitable for high pulse current operation DESCRIPTION Floor life: 168 h, MSL 3, according to J-STD-020 TM As part of the SurfLight portfolio, the VSMY12850 is an Material categorization: for definitions of compliance infrared, 850 nm, top looking emitting diode based on please see www.vishay.com/doc 99912 GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted PCB based package (with inner lens) for surface mounting (SMD). APPLICATIONS Emitter for proximity applications IR touch panels Photointerrupters Optical switch PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMY12850 16 40 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY12850 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 70 mA F Surge forward current t = 100 s I 1A p FSM Power dissipation P 140 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature acc. figure 10, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, soldered on PCB R 390 K/W thJA Rev. 1.0, 19-Mar-15 Document Number: 84234 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY12850 www.vishay.com Vishay Semiconductors 80 140 70 120 60 100 50 80 40 60 30 R = 390 K/W thJA R = 390 K/W thJA 40 20 20 10 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) amb T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 20 mA, t = 20 ms V 1.1 1.4 1.9 V F p F Forward voltage I = 70 mA, t = 20 ms V 1.65 V F p F I = 1 A, t = 100 s V 2.9 V F p F Temperature coefficient of V I = 20 mA TK -1.7 mV/K F F VF Reverse current I not designed for reverse operation A R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C 5pF R J I = 20 mA, t = 20 ms I 2.3 4.7 mW/sr F p e Radiant intensity I = 70 mA, t = 20 ms I 16 mW/sr F p e I = 1 A, t = 100 s I 130 mW/sr F p e Radiant power I = 70 mA, t = 20 ms 40 mW F p e Temperature coefficient of radiant I = 20 mA TK -0.19 %/K F e power Angle of half intensity 40 deg Peak wavelength I = 20 mA 830 850 870 nm F p Spectral bandwidth I = 20 mA 35 nm F Temperature coefficient of I = 20 mA TK 0.25 nm/K p F p Rise time I = 100 mA, 20 % to 80 % t 10 ns F r Fall time I = 100 mA, 20 % to 80 % t 10 ns F f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.80 1.75 I = 20 mA F t = 100 s p 1.70 1.65 100 1.60 1.55 1.50 1.45 10 1.40 1.35 1.30 1.25 1 1.20 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 -60 -40 -20 0 20 40 60 80 100 V - Forward Voltage (V) T - Ambient Temperature (C) F amb Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Forward Voltage vs. Ambient Temperature Rev. 1.0, 19-Mar-15 Document Number: 84234 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) P - Power Dissipation (mW) F V V - Forward Voltage (V) I - Forward Current (mA) F F