VS-MURD620CT-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 3 A FRED Pt FEATURES Base common cathode Ultrafast recovery time 4 Low forward voltage drop Low leakage current 175 C operating junction temperature 2 Meets MSL level 1, per J-STD-020, LF maximum peak Common DPAK (TO-252AA) of 260 C cathode 13 Material categorization: for definitions of compliance Anode Anode please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS VS-MURD620CT-M3 is the state of the art ultrafast recovery I 2 x 3 A F(AV) rectifier specifically designed with optimized performance of V 200 V forward voltage drop and ultrafast recovery time. R The planar structure and the platinum doped life tim e V at I 0.9 V F F control, guarantee the best overall performance, t typ. See Recovery table rr ruggedness and reliability characteristics. T max. 175 C J These devices are intended for use in the output rectificatio n Package DPAK (TO-252AA) stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and choppe r Circuit configuration Common cathode motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current per device I Total device, rated V , T = 146 C 6 F(AV) R C Non-repetitive peak surge current I 50 A FSM Peak repetitive forward current per diode I Rated V , square wave, 20 kHz, T = 146 C 6 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 3 A - 0.9 1.0 F V I = 3 A, T = 125 C - 0.78 0.96 F J Forward voltage V F I = 6 A - 1 1.2 F I = 6 A, T = 125 C - 0.89 1.13 F J V = V rated - - 5 R R Reverse leakage current I A R T = 125 C, V = V rated - - 250 J R R Junction capacitance C V = 200 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 09-Dec-2019 Document Number: 93497 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MURD620CT-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 0.5 A, I = 1.0 A, I = 0.25 A - - 25 F R REC Reverse recovery time t ns rr T = 25 C -19- J T = 125 C - 26 - J I = 3 A F T = 25 C - 3.1 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.6 - J V = 160 V R T = 25 C - 30 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R --9.0 thJC junction to case per leg Thermal resistance, R -- 80 C/W thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth, and greased - - - thCS case to heatsink -0.3 - g Weight -0.01- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style DPAK (TO-252AA) MURD620CT Revision: 09-Dec-2019 Document Number: 93497 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000