1N5417, 1N5418 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Low forward voltage drop High pulse current capability 949588 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOD-64 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, Fast rectification diode method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY 1N5418 1N5418TR 2500 per 10 tape and reel 12 500 1N5418 1N5418-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE 1N5417 V = 200 V I = 3 A SOD-64 R F(AV) 1N5418 V = 400 V I = 3 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT 1N5417 V = V 200 V R RRM Reverse voltage = repetitive peak reverse See electrical characteristics voltage 1N5418 V = V 400 V R RRM Peak forward surge current t = 10 ms, half sine wave I 100 A p FSM Average forward current l = 10 mm, T = 25 C I 3A L F(AV) Non repetitive reverse avalanche energy I = 1 A E 20 mJ (BR)R R Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 25 K/W L thJA Junction ambient On PC board with spacing 25 mm R 70 K/W thJA Rev. 1.5, 12-Sep-12 Document Number: 86097 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 910001N5417, 1N5418 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 3 A V -- 1.1 V F F Forward voltage I = 9 A V -- 1.5 V F F V = V I -- 1 A R RRM R Reverse current V = V , T = 100 C I - - 20 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - 75 100 ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 40 3.5 V = V R RRM half sinewave 3.0 30 2.5 R = 25 K/W thJA I = 10 mm 2.0 20 ll 1.5 R = 70 K/W 1.0 thJA 10 PCB: d = 25 mm 0.5 T = constant L 0 0 0 5 10 15 202530 0 20 40 60 80 100 120 140 160 180 16388 T - Ambient Temperature (C) 949466 l - Lead Length (mm) amb Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100 1000 V = V R RRM 10 T = 175 C j 100 1 T = 25 C j 0.1 10 0.01 1 0.001 0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175 T - Junction Temperature (C) 16387 V - Forward Voltage (V) 16389 j F Fig. 2 - Max. Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.5, 12-Sep-12 Document Number: 86097 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) R - Ther. Resist. Junction/Ambient (K/W) F thJA I - Average Forward Current (A) I - Reverse Current (A) FAV R