1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP
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Vishay General Semiconductor
Glass Passivated Junction Fast Switching Plastic Rectifier
FEATURES
Superectifier structure for high reliability condition
Cavity-free glass-passivated junction
SUPERECTIFIER
Fast switching for high efficiency
Low leakage current
High forward surge capability
Solder dip 275 C max. 10 s, per JESD 22-B106
Material categorization: for definitions of compliance
DO-204AC (DO-15)
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
PRIMARY CHARACTERISTICS
inverters, converters and freewheeling diodes for consumer
I 1.0 A
F(AV)
and telecommunication.
V 200 V, 400 V, 600 V, 800 V, 1000 V
RRM
I 50 A
FSM
MECHANICAL DATA
t 150 ns, 250 ns, 300 ns, 500 ns
rr
Case: DO-204AC, molded epoxy over glass body
I 0.5 A
Molding compound meets UL 94 V-0 flammability rating
R
Base P/N-E3 - RoHS-compliant, commercial grade
V 1.2 V
F
Terminals: Matte tin plated leads, solderable per
T max. 175 C
J
J-STD-002 and JESD 22-B102
Package DO-204AC (DO-15)
E3 suffix meets JESD 201 class 1A whisker test
Diode variation Single die
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT
Maximum repetitive peak reverse voltage V 200 400 600 800 1000 V
RRM
Maximum RMS voltage V 140 280 420 560 700 V
RMS
Maximum DC blocking voltage V 200 400 600 800 1000 A
DC
Maximum average forward rectified current
I 1.0 A
F(AV)
0.375" (9.5 mm) lead length at T = 55 C
A
Peak forward surge current 8.3 ms single half
I 50 A
FSM
sine-wave superimposed on rated load
Operating junction and
T , T -65 to +175 C
J STG
storage temperature range
Revision: 07-Nov-16 Document Number: 88522
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?910001N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT
Maximum instantaneous
1.0 A V 1.2 V
F
forward voltage
Maximum DC reverse T = 25 C 0.5
A
current at rated DC I A
R
T = 100 C 25
blocking voltage
A
Maximum reverse I = 0.5 A, I = 1.0 A,
F R
t 150 250 300 500 ns
rr
recovery time I = 0.25 A
rr
Typical junction
25 pF
4.0 V, 1 MHz C
J
capacitance
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT
(1)
Typical thermal resistance R 45 C/W
JA
Note
(1)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5619GP-E3/54 0.425 54 4000 13" diameter paper tape and reel
1N5619GP-E3/73 0.425 73 2000 Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
60
1.00
T = 55 C
A
50
8.3 ms Single Half Sine-Wave
0.75
40
30
0.50
20
0.25
10
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
0
25 50 75 100 125 150 175 1 10 100
Ambient Temperature (C) Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
Revision: 07-Nov-16 Document Number: 88522
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)