X-On Electronics has gained recognition as a prominent supplier of 1N5625-TR Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1N5625-TR Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

1N5625-TR Vishay

Hot 1N5625-TR electronic component of Vishay
1N5625-TR Vishay
1N5625-TR Rectifiers
1N5625-TR  Semiconductors

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See Product Specifications
Part No. 1N5625-TR
Manufacturer: Vishay
Category: Rectifiers
Description: Diode Avalanche 400 V 3A Through Hole SOD-64
Datasheet: 1N5625-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12500: USD 0.2706 ea
Line Total: USD 3382.5 
Availability - 12125
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 12500  Multiples: 12500
Pack Size: 12500
Availability Price Quantity
12224
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.6925
10 : USD 0.5788
100 : USD 0.4466
500 : USD 0.4125
1000 : USD 0.396
12500 : USD 0.396
25000 : USD 0.3927

14246
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 207
Multiples : 1
207 : USD 0.3134
210 : USD 0.3093
213 : USD 0.3051
250 : USD 0.301
500 : USD 0.2968
1000 : USD 0.2926
3000 : USD 0.2774
6000 : USD 0.2734

12125
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 12500
Multiples : 12500
12500 : USD 0.2706
50000 : USD 0.2679

4707
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 140
Multiples : 1
140 : USD 0.4654
152 : USD 0.4277
200 : USD 0.4147
500 : USD 0.3991
1000 : USD 0.3926
2000 : USD 0.3687
2500 : USD 0.3675

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
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Product
Brand
Factory Pack Quantity :
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Length
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Width
Cnhts
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We are delighted to provide the 1N5625-TR from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N5625-TR and other electronic components in the Rectifiers category and beyond.

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1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading 949588 Material categorization: For definitions of compliance please see MECHANICAL DATA www.vishay.com/doc 99912 Case: SOD-64 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Rectification diode, general purpose Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY 1N5627 1N5627-TR 2500 per 10 tape and reel 12 500 1N5627 1N5627-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE 1N5624 V = 200 V I = 3 A SOD-64 R F(AV) 1N5625 V = 400 V I = 3 A SOD-64 R F(AV) 1N5626 V = 600 V I = 3 A SOD-64 R F(AV) 1N5627 V = 800 V I = 3 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT 1N5624 V = V 200 V R RRM 1N5625 V = V 400 V Reverse voltage = repetitive peak reverse R RRM See electrical characteristics voltage 1N5626 V = V 600 V R RRM 1N5627 V = V 800 V R RRM Peak forward surge current t = 10 ms, half sinewave I 100 A p FSM Repetitive peak forward current I 18 A FRM Average forward current I 3A F(AV) t = 20 s, half sine wave, p Pulse avalanche peak power P 1000 W R T = 175 C j Pulse energy in avalanche mode, non repetitive I = 1 A, T = 175 C E 20 mJ (BR)R j R (inductive load switch off) 2 2 2 i *t-rating i *t 40 A *s Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT l = 10 mm, T = constant R 25 K/W L thJA Junction ambient On PC board with spacing 25 mm R 70 K/W thJA Rev. 1.6, 05-Sep-13 Document Number: 86063 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N5624, 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 3 A V -- 1 V F F V = V I -0.1 1 A R RRM R Reverse current V = V , T = 100 C I - 5 10 A R RRM j R I = 100 A, t /T = 0.01, R p Breakdown voltage V - - 1600 V (BR) t = 0.3 ms p Diode capacitance V = 4 V, f = 1 MHz C -40 60 pF R D I = 0.5 A, I = 1 A, i = 0.25 A t -3.5 5 s F R R rr Reverse recovery time I = 1 A, dI/d = 5 A/s, V = 50 V t -4.5 7.5 s F t R rr Reverse recovery charge I = 1 A, dI/d = 5 A/s Q -8 12 C F t rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 40 3.5 V = V R RRM 3.0 half sinewave R = 25 K/W thJA 30 l = 10 mm 2.5 2.0 20 ll 1.5 1.0 10 R = 70 K/W thJA 0.5 PCB: d = 25 mm T = constant L 0.0 0 30 0 5 10 15 20 25 04200 60 80 100 120 140 160 180 16393 T - Ambient Temperature (C) 94 9563 I - Lead Length (mm) amb Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100.000 V = V R RRM 10.000 100 T =175C j 1.000 0.100 T =25C j 10 0.010 0.001 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 50 75 100 125 150 175 16392 V Forward Voltage ( V ) 16394 T Junction Temperature ( C ) F j Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature Rev. 1.6, 05-Sep-13 Document Number: 86063 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R - Therm. Resist. thJA I Forward Current ( A) F Junction/Ambient (K/W) I R everse Current ( A ) I - Average Forward Current (A) FAV R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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