1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES Superectifier structure for high reliability condition Cavity-free glass-passivated junction SUPERECTIFIER Fast switching for high efficiency Low leakage current High forward surge capability Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance DO-15 (DO-204AC) please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, PRIMARY CHARACTERISTICS inverters, converters and freewheeling diodes for consumer I 1.0 A F(AV) and telecommunication. V 200 V, 400 V, 600 V, 800 V, 1000 V RRM I 50 A FSM MECHANICAL DATA t 150 ns, 250 ns, 300 ns, 500 ns rr Case: DO-15 (DO-204AC), molded epoxy over glass body I 0.5 A Molding compound meets UL 94 V-0 flammability rating R Base P/N-E3 - RoHS-compliant, commercial grade V 1.2 V F Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 Package DO-15 (DO-204AC) E3 suffix meets JESD 201 class 1A whisker test Circuit configuration Single Polarity: color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT Maximum repetitive peak reverse voltage V 200 400 600 800 1000 V RRM Maximum RMS voltage V 140 280 420 560 700 V RMS Maximum DC blocking voltage V 200 400 600 800 1000 A DC Maximum average forward rectified current I 1.0 A F(AV) 0.375 (9.5 mm) lead length at T = 55 C A Peak forward surge current 8.3 ms single half I 50 A FSM sine-wave superimposed on rated load Operating junction and T , T -65 to +175 C J STG storage temperature range Revision: 29-Apr-2020 Document Number: 88522 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT Maximum instantaneous 1.0 A V 1.2 V F forward voltage Maximum DC reverse T = 25 C 0.5 A current at rated DC I A R T = 100 C 25 blocking voltage A Maximum reverse I = 0.5 A, I = 1.0 A, F R t 150 250 300 500 ns rr recovery time I = 0.25 A rr Typical junction 4.0 V, 1 MHz C 25 pF J capacitance THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT (1) Typical thermal resistance R 45 C/W JA Note (1) Thermal resistance from junction to ambient at 0.375 (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N5619GP-E3/54 0.425 54 4000 13 diameter paper tape and reel 1N5619GP-E3/73 0.425 73 2000 Ammo pack packaging Revision: 29-Apr-2020 Document Number: 88522 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000