VS-4EGU06-M3/5BT Vishay

333 3 VS-4EGU06-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 4 A FRED Pt FEATURES Ultrafast recovery time, reduced Q and sof t rr recovery 175 C maximum operating junction temperature For PFC CRM/CCM, snubber operation Cathode Anode Low forward voltage drop Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMB (DO-214AA) Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS State of the art ultrafast recovery rectifiers designed with 3D Models optimized performance of forward voltage drop, ultrafast recovery time, and fast recovery. The planar structure and the platinum doped life time control PRIMARY CHARACTERISTICS guarantee the best overall performance, ruggedness and reliability characteristics. I 4 A F(AV) These devices are intended for use in PFC boost stage in th e V 600 V R AC/DC section of SMPS, inverters or as freewheeling V at I 0.94 V F F diodes. t typ. 45 ns rr Their extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce power Package SMB (DO-214AA) dissipation in the switching element and snubbers. Circuit configuration Single MECHANICAL DATA Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes the cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM (1) Average rectified forward current I T = 103 C 4 F(AV) L A Non-repetitive peak surge current I T = 25 C, 6 ms square pulse 100 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg Note (1) Mounted on PCB with minimum pad size ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 4 A - 1.12 1.3 V F Forward voltage V F I = 4 A, T = 150 C - 0.94 1.15 F J V = V rated - - 3 R R Reverse leakage current I A R T = 150 C, V = V rated - - 100 J R R Junction capacitance C V = 600 V - 6.8 - pF T R Revision: 17-Mar-2021 Document Number: 94774 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-4EGU06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 45 - F F R I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 50 - F F R Reverse recovery time t I = 0.5 A, I = 1 A, I = 0.25 A - - 65 ns rr F R rr T = 25 C -39- J T = 125 C - 61 - J I = 4 A F T = 25 C - 5.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.7 - J V = 390 V R T = 25 C - 119 - J Reverse recovery charge Q nC rr T = 125 C - 251 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -55 - +175 C J Stg range (1) Thermal resistance, junction to mount R --18 thJM C/W (1) Thermal resistance, junction to ambient R -- 90 thJA 0.1 g Approximate Weight 0.003 oz. Marking device Case style SMB (DO-214AA) 4U6 Note (1) Mounted on PCB with minimum pad size 100 100 175 C 10 150 C 125 C T = 175 C 1 10 J T = 150 C J 0.1 25 C 0.01 1 T = 125 C J T = 25 C J 0.001 T = -40 C J 0.0001 0.1 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2.0 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 17-Mar-2021 Document Number: 94774 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R