VS-8EWH06FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyper fast recovery time, reduced Q and soft rr 4 recovery 2, 4 175 C maximum operating junction temperature For PFC CRM/CCM operation 2 3 Low forward voltage drop 1 3 1 N/C Anode Low leakage current DPAK (TO-252AA) AEC-Q101 qualified Meets JESD 201 class 2 whisker test Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 8 A F(AV) V 600 V R DESCRIPTION / APPLICATIONS V at I 1.3 V F F State of the art hyper fast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast t (typ.) 18 ns rr recovery time, and soft recovery. T max. 175 C J The planar structure and the platinum doped life tim e Package DPAK (TO-252AA) control guarantee the best overall performance, ruggedness Circuit configuration Single and reliability characteristics. These devices are intended for use in PFC boost stage in th e AC/DC section of SMPS inverters or as freewheeling diodes . Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 143 C 8 F(AV) C Non-repetitive peak surge current I T = 25 C 90 A FSM J Peak repetitive forward current I T = 143 C, f = 20 kHz, d = 50 % 16 FM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 8 A - 2.0 2.4 F Forward voltage V F I = 8 A, T = 150 C - 1.3 1.8 F J V = V rated - - 50 R R Reverse leakage current I A R T = 150 C, V = V rated - - 500 J R R Junction capacitance C V = 600 V - 8 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 11-Apr-18 Document Number: 94739 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8EWH06FNHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V 21 F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - 18 22 F F R Reverse recovery time t ns rr T = 25 C -25- J T = 125 C - 34 - J I = 8 A F T = 25 C - 3.3 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.8 - J V = 390 V R T = 25 C - 39 - J Reverse recovery charge Q nC rr T = 125 C - 90 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.82.2C/W thJC junction to case per leg 0.3 g Approximate weight 0.01 oz. Marking device Case style DPAK (TO-252AA) 8EWH06FNH Revision: 11-Apr-18 Document Number: 94739 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000