BYV25G-600,127 NXP

BYV25G-600 Ultrafast power diode 29 September 2018 Product data sheet 1. General description Ultrafast power diode in a SOT226A (I2PAK) plastic package. 2. Features and benefits Fast switching High thermal cycling performance Low forward voltage drop Low profile package facilitates compact/slim designs Low switching losses Low thermal resistance Soft recovery minimizes power-consuming oscillations 3. Applications Discontinuous Current Mode (DCM) Power Factor Correction (PFC) High frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC T 100 C - - 600 V R mb I average forward = 0.5 T 135 C SQW Fig. 1 - - 5 A F(AV) mb current Fig. 2 I non-repetitive peak t = 8.3 ms T = 25 C SIN - - 66 A FSM p j(init) forward current t = 10 ms T = 25 C SIN - - 60 A p j(init) Static characteristics V forward voltage I = 5 A Fig. 4 - 1.12 1.3 V F F I = 5 A T 150 C Fig. 4 - 0.97 1.11 V F mb Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 50 60 ns rr F R F T = 25 C Fig. 5 jWeEn Semiconductors BYV25G-600 Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. not connected K A 001aaa020 2 K cathode 3 A anode mb K mounting base cathode 1 2 3 I2PAK (SOT226A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV25G-600 I2PAK plastic single-ended package (I2PAK) TO-262 SOT226A BYV25G-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 29 September 2018 2 / 10