BYV29B-500,118 NXP

BYV29B-500 Ultrafast power diode Rev. 2 3 April 2012 Product data sheet 1. Product profile 1.1 General description Ultrafast power diode in a SOT404 (D2PAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching Low thermal resistance High thermal cycling performance Soft recovery minimizes power-consuming oscillations Low forward volt drop Surface mountable package 1.3 Applications Discontinuous Current Mode (DCM) Output rectifiers in high-frequency Power Factor Correction (PFC) switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse voltage - - 500 V RRM I average forward current square-wave pulse; =0.5 ; --9 A F(AV) T 123 C; see Figure 1; mb see Figure 2 Static characteristics V forward voltage I =8A; T = 150 C; see Figure 4 - 0.9 1.03 V F F j Dynamic characteristics reverse recovery time I =1A; V =30V; dI /dt = 100 A/s; - 5060ns t rr F R F T =25 C; see Figure 7; see Figure 6 j D2PAKBYV29B-500 NXP Semiconductors Ultrafast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. no connection mb K A [1] 2 K cathode 001aaa020 3 A anode mb K mounting base; cathode 2 13 SOT404 (D2PAK) [1] it is not possible to make a connection to Pin 2 of the SOT404 package 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV29B-500 D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 500 V RRM V crest working reverse voltage - 500 V RWM V reverse voltage DC - 500 V R I average forward current square-wave pulse; = 0.5 ; T 123 C; -9 A F(AV) mb see Figure 1; see Figure 2 I repetitive peak forward current square-wave pulse; = 0.5 ; t = 25 s; -18 A FRM p T 123 C mb I non-repetitive peak forward t = 10 ms; sine-wave pulse; T = 25 C - 100 A FSM p j(init) current t = 8.3 ms; sine-wave pulse; T =25C - 110 A p j(init) T storage temperature -40 150 C stg T junction temperature - 150 C j BYV29B-500 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 3 April 2012 2 of 11