Product Information

BYV29FX-600,127

BYV29FX-600,127 electronic component of NXP

Datasheet
Rectifiers DIODE RECT UFAST 600V
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9235 ea
Line Total: USD 0.92

5820 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5820 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.9235
10 : USD 0.7567
100 : USD 0.6026
500 : USD 0.5255
1000 : USD 0.4393
2000 : USD 0.4209
5000 : USD 0.4014
10000 : USD 0.3887
25000 : USD 0.3887

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Packaging
Product
Brand
Maximum Reverse Leakage Current
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
Taric
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Additional Infomation About Product

BYV29FX-600 Enhanced ultrafast power diode 30 January 2018 Product data sheet 1. General description Enhanced ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Isolated package Low thermal resistance Low on-state losses High thermal cycling performance Soft recovery characteristic 3. Applications Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 72 C 9 A F(AV) h Fig. 1 Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 72 C 18 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 91 A FSM p j(init) forward current Fig. 3 t = 8.3 ms T = 25 C sine-wave pulse 100 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 25 C Fig. 5 - 1.45 1.9 V F F j I = 8 A T = 150 C Fig. 5 - 1.25 1.7 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 17.5 35 ns rr F R F T = 25 C Fig. 6 jWeEn Semiconductors BYV29FX-600 Enhanced ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (2-lead TO-220F) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV29FX-600 TO-220F plastic single-ended package isolated heatsink mounted SOD113 1 mounting hole 2-lead TO-220full pac 7. Marking Table 4. Marking codes Type number Marking codes BYV29FX-600 BYV29FX-600 BYV29FX-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 2 / 11

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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