Philips Semiconductors Product specification Rectifier diodes BYV32E, BYV32EB series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop V = 100/ 150 V/ 200 V R Fast switching Soft recovery characteristic V 0.85 V a1 a2 F Reverse surge capability 13 High thermal cycling performance I = 20 A O(AV) Low thermal resistance I = 0.2 A k 2 RRM t 25 ns rr GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32E series is supplied in the SOT78 conventional leaded package. The BYV32EB series is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 PIN DESCRIPTION tab tab 1 anode 1 (a) 1 2 cathode (k) 2 3 anode 2 (a) 13 123 tab cathode (k) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV32E / BYV32EB -100 -150 -200 V Peaqk repetitive reverse - 100 150 200 V RRM voltage V Crest working reverse voltage - 100 150 200 V RWM V Continuous reverse voltage - 100 150 200 V R I Average rectified output current square wave = 0.5 - 20 A O(AV) (both diodes conducting) T 115 C mb I Repetitive peak forward current t = 25 s = 0.5 - 20 A FRM per diode T 115 C mb I Non-repetitive peak forward t = 10 ms - 125 A FSM current per diode t = 8.3 ms - 137 A sinusoidal with reapplied V RWM(max) I Repetitive peak reverse current t = 2 s = 0.001 - 0.2 A RRM p per diode I Non-repetitive peak reverse t = 100 s - 0.2 A RSM p current per diode T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j 1 It is not possible to make connection to pin 2 of the SOT404 package August 2001 1 Rev 1.300Philips Semiconductors Product specification Rectifier diodes BYV32E, BYV32EB series ultrafast, rugged ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Electrostatic discharge Human body model - 8 kV C capacitor voltage C = 250 pF R = 1.5 k THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R Thermal resistance junction per diode - - 2.4 K/W th j-mb to mounting base both diodes - - 1.6 K/W R Thermal resistance junction SOT78 package, in free air - 60 - K/W th j-a to ambient SOT404 and SOT428 packages, pcb - 50 - K/W mounted, minimum footprint, FR4 board ELECTRICAL CHARACTERISTICS characteristics are per diode at T = 25 C unless otherwise stated j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V Forward voltage I = 8 A T = 150C - 0.72 0.85 V F F j I = 20 A - 1.00 1.15 V F I Reverse current V = V T = 100 C - 0.2 0.6 mA R R RWM j V = V -6 30 A R RWM Q Reverse recovery charge I = 2 A V 30 V -dI /dt = 20 A/ s - 8 12.5 nC s F R F t Reverse recovery time I = 1 A V 30 V - 20 25 ns rr1 F R -dI /dt = 100 A/ s F t Reverse recovery time I = 0.5 A to I = 1 A I = 0.25 A - 10 20 ns rr2 F R rec V Forward recovery voltage I = 1 A dI /dt = 10 A/s-1-V fr F F August 2001 2 Rev 1.300