BYV32E-200 NXP

BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 27 February 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High reverse voltage surge capability Soft recovery characteristic minimizes power consuming oscillations High thermal cycling performance Very low on-state loss Low thermal resistance 1.3 Applications Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V repetitive peak - - 200 V RRM reverse voltage I average output square-wave pulse = 0.5 --20 A O(AV) current T 115 C both diodes mb conducting see Figure 1 see Figure 2 I repetitive peak t =2s =0.001 --0.2 A RRM p reverse current V electrostatic HBM C = 250 pF R = 1.5 --8 kV ESD discharge voltage k all pins Dynamic characteristics t reverse recovery I =1A V =30V - 2025ns rr F R time dI /dt = 100 A/s F T = 25 C ramp recovery j see Figure 5 I =1 A I =0.5 A - 1020ns R F T = 25 C step recovery j measured at reverse current = 0.25 A see Figure 6 Static characteristics V forward voltage I =8A T =150 C see - 0.72 0.85 V F F j Figure 4NXP Semiconductors BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb 2 K cathode A1 A2 3 A2 anode 2 K sym125 mb K mounting base cathode 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV32E-200 TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB BYV32E-200 4 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 27 February 2009 2 of 9