BYT62 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 949539 APPLICATIONS MECHANICAL DATA High voltage rectification diode Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT62 BYT62-TR 5000 per 10 tape and reel 25 000 BYT62 BYT62-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYT62 V = 2400 V I = 350 mA SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage = repetitive peak reverse See electrical characteristics V = V 2400 V R RRM voltage Peak forward surge current t = 10 ms, half sine wave I 10 A p FSM Average forward current R 60 K/W I 350 mA thJA F(AV) Non repetitive reverse avalanche energy I = 1 A, inductive load E 60 mJ (BR)R R Junction temperature T 175 C j Storage temperature range T - 55 to + 190 C stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction ambient Lead length l = 10 mm, T = constant R 60 K/W L thJA Rev. 1.8, 11-Sep-12 Document Number: 86033 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYT62 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX UNIT I = 200 mA V -- 3 V F F I = 1 A V -- 3.6 V F F Forward voltage I = 1 A, T = 175 C V -- 2.9 V F j F I = 1 A, T = - 40 C V -- 4 V F j F V = V I -- 5 A R RRM R Reverse current V = V , T = 175 C I - - 250 A R RRM j R V = V , T = - 40 C I - - 400 nA R RRM j R Reverse breakdown voltage I = 100 A V 2500 - - V R (BR)R Reverse recovery time l = 0.5 A, l = 1 A, i = 0.25 A t -- 5 s F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 600 10 T = 175 C j 500 R = 30 K/W thJA 1 400 T = 25 C j 300 0.1 R = 60 K/W thJA 200 0.01 T = - 40 C j 100 V = V R RRM 0 0.001 200 040 80 120 160 03125476 95 9727 V - Forward Voltage (V) T - Junction Temperature (C) 95 9725 F j Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Max. Forward Current vs. Forward Voltage 1000 V = V R RRM 100 10 1 0.1 200 040 80 120 160 T - Junction Temperature (C) 95 9726 j Fig. 2 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 11-Sep-12 Document Number: 86033 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Max. Reverse Power Dissipation (mW) R I - Reverse Current (A) R I - Forward Current (A) F