Product Information

BYV10X-600PQ

BYV10X-600PQ electronic component of NXP

Datasheet
Rectifiers Ultrafast Pwr Diode
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7291 ea
Line Total: USD 0.73

6788 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6775 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.7291
10 : USD 0.6026
100 : USD 0.437
500 : USD 0.3738
1000 : USD 0.3243
2000 : USD 0.2921
5000 : USD 0.2495
25000 : USD 0.2484

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYV10X-600P Ultrafast power diode 26 September 2018 Product data sheet 1. General description Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Fast switching Isolated plastic package Low leakage current Low forward voltage drop Low thermal resistance Soft recovery characteristic 3. Applications High frequency switched-mode power supplies Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 600 V R I average forward = 0.5 T 71 C square-wave - - 10 A F(AV) h current pulse Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak t = 10 ms T = 25 C sine-wave - - 80 A FSM p j(init) forward current pulse Fig. 4 t = 8.3 ms T = 25 C sine-wave - - 88 A p j(init) pulse Static characteristics V forward voltage I = 10 A T = 25 C Fig. 6 - 1.5 2 V F F j I = 10 A T = 150 C Fig. 6 - - 1.6 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 50 A/s - 35 50 ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYV10X-600P Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode K A mb 001aaa020 2 A anode mb n.c. mounting base isolated 1 2 TO-220F (SOD113) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV10X-600P TO-220F plastic single-ended package isolated heatsink mounted 1 SOD113 mounting hole 2-lead TO-220full pac BYV10X-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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