Product Information

BYV25FX-600,127

BYV25FX-600,127 electronic component of NXP

Datasheet
Rectifiers PWR 600 V 5 A Diode
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2408 ea
Line Total: USD 1.24

2363 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2092 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.012
10 : USD 0.8717
100 : USD 0.6037
500 : USD 0.5049
1000 : USD 0.4289
2000 : USD 0.3818
5000 : USD 0.3611
10000 : USD 0.3346
25000 : USD 0.3312

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Packaging
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BYV25FX-600 Enhanced ultrafast power diode Rev.03 - 30 January 2018 Product data sheet 1. General description Enhanced ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits High thermal cycling performance Isolated package Low thermal resistance Soft recovery characteristic Low on-state losses 3. Applications Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 97 C 5 A F(AV) h Fig. 1 Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 97 C 10 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 60 A FSM p j(init) forward current Fig. 3 t = 8.3 ms T = 25 C sine-wave pulse 66 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 5 A T = 25 C Fig. 5 - 1.3 1.9 V F F j I = 5 A T = 150 C Fig. 5 - 1.1 1.7 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 17.5 35 ns rr F R F T = 25 C Fig. 6 jWeEn Semiconductors BYV25FX-600 Enhanced ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (2-lead TO-220F) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV25FX-600 TO-220F plastic single-ended package isolated heatsink mounted SOD113 1 mounting hole 2-lead TO-220full pac 7. Marking Table 4. Marking codes Type number Marking codes BYV25FX-600 BYV25FX-600 BYV25FX-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 2 / 12

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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