BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 949539 APPLICATIONS MECHANICAL DATA Fast rectification and switching diode Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT52M BYT52M-TR 5000 per 10 tape and reel 25 000 BYT52M BYT52M-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYT52A V = 50 V I = 1.4 A SOD-57 R F(AV) BYT52B V = 100 V I = 1.4 A SOD-57 R F(AV) BYT52D V = 200 V I = 1.4 A SOD-57 R F(AV) BYT52G V = 400 V I = 1.4 A SOD-57 R F(AV) BYT52J V = 600 V I = 1.4 A SOD-57 R F(AV) BYT52K V = 800 V I = 1.4 A SOD-57 R F(AV) BYT52M V = 1000 V I = 1.4 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYT52A V = V 50 V R RRM BYT52B V = V 100 V R RRM BYT52D V = V 200 V R RRM Reverse voltage = repetitive peak reverse See electrical characteristics BYT52G V = V 400 V R RRM voltage BYT52J V = V 600 V R RRM BYT52K V = V 800 V R RRM BYT52M V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM On PC board I 0.85 A F(AV) Average forward current l = 10 mm I 1.4 A F(AV) BYT52J E 10 mJ R Non repetitive reverse avalanche energy I = 0.4 A BYT52K E 10 mJ (BR)R R BYT52M E 10 mJ R Junction and storage temperature range T = T - 55 to + 175 C j stg Rev. 1.8, 11-Sep-12 Document Number: 86029 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 1 A V -- 1.3 V F F V = V I -- 5 A R RRM R Reverse current V = V , T = 150 C I -- 150 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t -- 200 ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 1.6 V = V R RRM 1.4 half sinewave 100 1.2 R = 45 K/W thJA 80 I = 10 mm 1.0 60 0.8 ll 0.6 R = 100 K/W thJA 40 PCB: d = 25 mm 0.4 20 0.2 T = constant L 0 0 0 5 10 15 202530 0 20406080 100120140160180 949552 l - Lead Length (mm) T - Ambient Temperature (C) 16329 amb Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 10 1000 V = V R RRM T = 175 C j 1 100 T = 25 C j 0.1 10 0.01 0.001 1 0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175 16328 V - Forward Voltage (V) 16330 T - Junction Temperature (C) F j Fig. 2 - Max. Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 11-Sep-12 Document Number: 86029 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) R - Ther. Resist. Junction/Ambient (K/W) F thJA I - Reverse Current (A) I - Average Forward Current (A) R FAV