BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 949539 APPLICATIONS MECHANICAL DATA Very fast rectification and switches Case: SOD-57 Switched mode power supplies Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 High-frequency inverter circuits Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT53G BYT53G-TR 5000 per 10 tape and reel 25 000 BYT53G BYT53G-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYT53A V = 50 V I = 1.9 A SOD-57 R F(AV) BYT53B V = 100 V I = 1.9 A SOD-57 R F(AV) BYT53C V = 150 V I = 1.9 A SOD-57 R F(AV) BYT53D V = 200 V I = 1.9 A SOD-57 R F(AV) BYT53F V = 300 V I = 1.9 A SOD-57 R F(AV) BYT53G V = 400 V I = 1.9 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYT53A V = V 50 V R RRM BYT53B V = V 100 V R RRM BYT53C V = V 150 V Reverse voltage = repetitive peak reverse R RRM See electrical characteristics voltage BYT53D V = V 200 V R RRM BYT53F V = V 300 V R RRM BYT53G V = V 400 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM Average forward current l = 10 mm, T = 25 C I 1.9 A L F(AV) Non repetitive reverse avalanche energy I = 1 A E 20 mJ (BR)R R Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA Rev. 2.0, 04-Sep-12 Document Number: 86030 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 1 A V -- 1.1 V F F Forward voltage I = 1 A, T = 175 C V -- 0.9 V F j F V = V I -- 5 A R RRM R Reverse current V = V , T = 150 C I - - 200 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 50 ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 2.0 VR = V RRM 1.8 half sine wave 100 1.6 R = 45 K/W thJA 1.4 80 l = 10 mm 1.2 60 1.0 ll 0.8 40 0.6 R = 100 K/W thJA 0.4 20 PCB: d = 25 mm 0.2 T = constant L 0 0.0 0 5 10 15 202530 0 20 40 60 80 100 120 140 160 180 949552 l - Lead Length (mm) 16334 T - Junction Temperature (C) amb Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 10 1000 V = V R RRM T = 175 C j 1 100 T = 25 C j 0.1 10 0.01 0.001 1 25 50 75 100 125 150 175 0 0.5 1 1.5 2 2.5 3 16333 16335 V - Forward Voltage (V) T - Junction Temperature (C) j F Fig. 2 - Max. Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 2.0, 04-Sep-12 Document Number: 86030 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) R - Ther. Resist. Junction/Ambient (K/W) F thJA I - Average Forward Current (A) FAV I - Reverse Current (A) R