VS-SD200N/R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 200 A FEATURES Wide current range High voltage ratings up to 2400 V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Compression bonded encapsulations DO-30 (DO-205AC) Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS Converters PRIMARY CHARACTERISTICS Power supplies I 200 A F(AV) Package DO-30 (DO-205AC) Machine tool controls Circuit configuration Single High power drives Medium traction applications MAJOR RATINGS AND CHARACTERISTICS VS-SD200N/R PARAMETER TEST CONDITIONS UNITS 1600 to 2000 2400 200 200 A I F(AV) T 110 110 C C I 314 314 F(RMS) 50 Hz 4700 4700 A I FSM 60 Hz 4920 4920 50 Hz 110 110 2 2 I t kA s 60 Hz 101 101 V Range 1600 to 2000 2400 V RRM T -40 to +180 +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM J J CODE V V mA 16 1600 1700 VS-SD200N/R 20 2000 2100 15 24 2400 2500 Revision: 11-Jan-18 Document Number: 93541 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD200N/R Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 200 A Maximum average forward current at case temperature 110 C I 180 conduction, half sine wave F(AV) 220 A Maximum average forward current at case temperature 100 C Maximum RMS forward current I DC at 95 C case temperature 314 F(RMS) t = 10 ms 4700 No voltage reapplied t = 8.3 ms 4920 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current t = 10 ms 3950 100 % V RRM Sinusoidal half wave, reapplied t = 8.3 ms 4140 initial t = 10 ms 110 No voltage T = T maximum J J reapplied t = 8.3 ms 101 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 78 100 % V RRM reapplied t = 8.3 ms 71 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 1100 kA s (16.7 % x x I < I < x I ), F(AV) F(AV) Low level value of threshold voltage V 0.90 F(TO)1 T = T maximum J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.00 F(TO)2 F(AV) J J (16.7 % x x I < I < x I ), F(AV) F(AV) Low level value of forward slope resistance r 0.79 f1 T = T maximum J J mW High level value of forward slope resistance r (I > x I ), T = T maximum 0.64 f2 F(AV) J J I = 630 A, T = T maximum, pk J J Maximum forward voltage drop V 1.40 V FM t = 10 ms sinusoidal wave p THERMAL AND MECHANICAL SPECIFICATIONS SD200N/R PARAMETER SYMBOLTEST CONDITIONS UNITS 1600 to 2000 2400 Maximum junction operating T -40 to 180 -40 to 150 J temperature range C Maximum storage temperature range T -55 to 200 Stg Maximum thermal resistance, R DC operation 0.23 thJC junction to case K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.08 thCS case to heatsink Maximum allowed Not-lubricated threads 14 Nm mounting torque 10 % Approximate weight 120 g Case style See dimensions (link at the end of datasheet) DO-30 (DO-205AC) R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.041 0.030 120 0.049 0.051 90 0.063 0.068 T = T maximum K/W J J 60 0.093 0.096 30 0.156 0.157 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 11-Jan-18 Document Number: 93541 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000