VS-SD400C..C Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK Version), 800 A FEATURES Wide current range High voltage ratings up to 2400 V High surge current capabilities Diffused junction Hockey PUK version Case style A-PUK (DO-200AA) Designed and qualified for industrial level Material categorization: for definitions of compliance A-PUK (DO-200AA) please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS Converters PRIMARY CHARACTERISTICS Power supplies I 800 A F(AV) Machine tool controls Package A-PUK (DO-200AA) High power drives Circuit configuration Single Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 800 A I F(AV) T 55 C hs 1435 A I F(RMS) T 25 C hs 50 Hz 8250 I A FSM 60 Hz 8640 50 Hz 340 2 2 I t kA s 60 Hz 311 V Range 400 to 2400 V RRM T -40 to +190 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 150 C J CODE V V mA 04 400 500 08 800 900 12 1200 1300 VS-SD400C..C 15 16 1600 1700 20 2000 2100 24 2400 2500 Revision: 11-Jan-18 Document Number: 93547 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD400C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 800 (425) A Maximum average forward current 180 conduction, half sine wave I F(AV) at heatsink temperature Double side (single side) cooled 55 (85) C Maximum RMS forward current I 25 C heatsink temperature double side cooled 1435 F(RMS) t = 10 ms 8250 No voltage t = 8.3 ms reapplied 8640 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current t = 10 ms 6940 50 % V RRM reapplied t = 8.3 ms 7265 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 340 No voltage t = 8.3 ms reapplied 311 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 241 50 % V RRM reapplied t = 8.3 ms 220 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 3400 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.80 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.83 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 0.55 f1 F(AV) F(AV) J J slope resistance m High level value of forward r (I > x I ), T = T maximum 0.53 f2 F(AV) J J slope resistance I = 1930 A, T = T maximum, t = 10 ms sinusoidal pk J J p Maximum forward voltage drop V 1.86 V FM wave THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction operating T -40 to +190 J temperature range C Maximum storage temperature range T -55 to +200 Stg DC operation single side cooled 0.163 Maximum thermal resistance, R K/W thJ-hs junction to heatsink DC operation double side cooled 0.073 Mounting force, 10 % 4900 (500) N (kg) Approximate weight 70 g Case style See dimensions - link on page 5 A-PUK (DO-200AA) R CONDUCTION thJ-hs SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.017 0.018 0.011 0.012 120 0.020 0.020 0.020 0.020 90 0.025 0.025 0.027 0.027 T = T maximum K/W J J 60 0.037 0.036 0.038 0.038 30 0.064 0.062 0.065 0.062 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJ-hs Revision: 11-Jan-18 Document Number: 93547 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000