MURT30040 GeneSiC Semiconductor

MURT30040 thru MURT30060R V = 400 V - 600 V RRM Silicon Super Fast I = 300 A F(AV) Recovery Diode Features High Surge Capability Three Tower Package Types from 400 V to 600 V V RRM Isolation Type Package Electrically Isolated base plate Not ESD Sensitive Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Conditions MURT30060(R) Parameter Symbol MURT30040(R) Unit V Repetitive peak reverse voltage 400 600 V RRM V 424 RMS reverse voltage 283 V RMS DC blocking voltage V 400 600 V DC T -55 to 150 Operating temperature -55 to 150 C j T Storage temperature -55 to 150 -55 to 150 C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions MURT30040(R) MURT30060(R) Unit I T = 125 C 300 Average forward current (per pkg) 300 A F(AV) C I t = 8.3 ms, half sine Peak forward surge current (per leg) 2750 2750 A FSM p Maximum instantaneous forward V I = 150 A, T = 25 C 1.70 V F FM j 1.35 voltage (per leg) Maximum instantaneous reverse T = 25 C 25 j 25 A I current at rated DC blocking voltage R T = 125 C 2 2 mA (per leg) j I =0.5 A, I =1.0 A, Maximum reverse recovery time (per F R T 110 150 nS rr I = 0.25 A leg) RR Thermal characteristics Maximum thermal resistance, junction R 0.40 0.40 C/W JC - case (per leg) 1 Oct. 2018 MURT30040 thru MURT30060R 2 Oct. 2018