VS-SD1553C..K Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 1650 A, 1825 A FEATURES High power fast recovery diode series 2.0 s to 3.0 s recovery time High voltage ratings up to 3000 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation K-PUK (DO-200AC) Case style conform to JEDEC K-PUK (DO-200AC) Maximum junction temperature 150 C Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 1650 A, 1825 A F(AV) Package K-PUK (DO-200AC) TYPICAL APPLICATIONS Circuit configuration Single Snubber diode for GTO High voltage freewheeling diode Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS SD1553C..K PARAMETER TEST CONDITIONS UNITS S20 S30 1825 1650 A I F(AV) T 55 55 C hs I 3100 2800 F(RMS) 50 Hz 25 000 22 000 A I FSM 60 Hz 26 180 23 000 V Range 1800 to 2500 1800 to 3000 V RRM 2.0 3.0 s t rr T 25 J C T -40 to +150 J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM J J CODE V V mA 18 1800 1900 VS-SD1553C..S20K 22 2200 2300 25 2500 2600 18 1800 1900 75 22 2200 2300 VS-SD1553C..S30K 25 2500 2600 28 2800 2900 30 3000 3100 Revision: 11-Jan-18 Document Number: 93169 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD1553C..K Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION SD1553C..K PARAMETER SYMBOL TEST CONDITIONS UNITS S20 S30 1825 (865) 1650 (790) A Maximum average forward current 180 conduction, half sine wave I F(AV) at heatsink temperature Double side (single side) cooled 55 (85) 55 (85) C Maximum RMS forward current I 25 C heatsink temperature double side cooled 3100 2800 F(RMS) t = 10 ms 25 000 22 000 No voltage reapplied t = 8.3 ms 26 180 23 000 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current t = 10 ms 21 030 18 500 100 % V RRM Sinusoidal half wave, reapplied t = 8.3 ms 22 010 19 370 initial T = T J J t = 10 ms 3126 2421 No voltage maximum reapplied t = 8.3 ms 2854 2210 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 2210 1712 100 % V RRM reapplied t = 8.3 ms 2018 1563 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 31 260 24 210 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.15 1.31 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.29 1.45 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 0.27 0.32 f1 F(AV) F(AV) J J slope resistance mW High level value of forward r (I > x I ), T = T maximum 0.25 0.30 f2 F(AV) J J slope resistance I = 4000 A, T = T maximum, pk J J Maximum forward voltage drop V 2.23 2.60 V FM t = 10 ms sinusoidal wave p RECOVERY CHARACTERISTICS MAXIMUM VALUE TYPICAL VALUES TEST CONDITIONS AT T = 25 C AT T = 150 C J J I I FM CODE pk t t AT 25 % I SQUARE dI/dt V t AT 25 % I Q I rr rr RRM r rr RRM rr rr (s) PULSE (A/s) (V) (s) (C) (A) t (A) dir dt Q S20 2.0 4.5 650 240 rr 1000 100 - 50 I RM(REC) S30 3.0 5.0 780 260 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction operating T , T -40 to 150 C J Stg and storage temperature range DC operation single side cooled 0.04 Maximum thermal resistance, R K/W thJ-hs case junction to heatsink DC operation double side cooled 0.02 22 250 N Mounting force, 10 % (2250) (kg) Approximate weight 425 g Case style See dimensions - link at the end of datasheet K-PUK (DO-200AC) R CONDUCTION thJ-hs SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.0018 0.0019 0.0012 0.0012 120 0.0021 0.0021 0.0021 0.0021 90 0.0027 0.0027 0.0029 0.0029 T = T maximum K/W J J 60 0.0039 0.0039 0.0041 0.0041 30 0.0067 0.0067 0.0068 0.0068 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJ-hs Revision: 11-Jan-18 Document Number: 93169 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000