VS-MURB1020CT-M3, VS-MURB1020CT-1-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 5 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 2 1 175 C operating junction temperature 1 Meets MSL level 1, per J-STD-020, LF maximum peak 3 2 of 245 C 2 D PAK (TO-263AB) 3 TO-262AA Material categorization: for definitions of compliance Base Base please see www.vishay.com/doc 99912 common common cathode cathode 2 2 DESCRIPTION / APPLICATIONS MUR.. series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. 12 3 12 3 The planar structure and the platinum doped life time Anode Common Anode Anode Common Anode control, guarantee the best overall performance, 1 cathode 2 1 cathode 2 ruggedness and reliability characteristics. VS-MURB1020CT-M3 VS-MURB1020CT-1-M3 These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as PRIMARY CHARACTERISTICS freewheeling diode in low voltage inverters and chopper motor drives. I 2 x 5 A F(AV) Their extremely optimized stored charge and low recovery V 200 V R current minimize the switching losses and reduce over V at I 0.87 V F F dissipation in the switching element and snubbers. t 25 ns rr T max. 175 C J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 200 V RRM per leg 5 Average rectified forward current I F(AV) total device Rated V , T = 149 C 10 R C A Non-repetitive peak surge current per leg I 50 FSM Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 149 C 10 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 5 A, T = 25 C - 0.99 1.08 F J V I = 5 A, T = 125 C - 0.87 0.99 F J Forward voltage V F I = 10 A, T = 25 C - 1.12 1.25 F J I = 10 A, T = 125 C - 1.02 1.20 F J V = V rated - - 10 R R Reverse leakage current I A R T = 150 C, V = V rated - - 250 J R R Junction capacitance C V = 200 V - 8 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 25-Oct-17 Document Number: 96389 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MURB1020CT-M3, VS-MURB1020CT-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 0.5 A, I = 1.0 A, I = 0.25 V - - 25 F R REC Reverse recovery time t ns rr T = 25 C -24- J T = 125 C - 35 - J I = 5 A F T = 25 C - 3.3 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.0 - J V = 160 V R T = 25 C - 33 - J Reverse recovery charge Q nC rr T = 125 C - 76 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R --5 thJC junction to case per leg Thermal resistance, R -- 50 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth, and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK (TO-263AB) MURB1020CT Marking device Case style TO-262 MURB1020CT-1 100 100 T = 175 C J 10 T = 150 C J 1 10 T = 125 C J T = 175 C J T = 100 C 0.1 J T = 125 C J T = 25 C J 1 0.01 0.001 T = 25 C J 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 40 80 120 160 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 25-Oct-17 Document Number: 96389 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R