HS1D Green 1.0A SURFACE MOUNT HYPER-FAST RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V (MAX) (V) I (A) Low Profile, Small Form Factor Package RRM O F R(MAX) Low Leakage Current 200 1 1.1 5 Glass Passivated for High Reliability Hyper-Fast Recovery Time for High Efficiency Low Forward Voltage, Low Power Loss Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data The HS1D is a rectifier packaged in the SMA package and is suited Case: SMA as a boost diode in power factor correction circuitry. For use in Case Material: Molded Plastic, Green Molding Compound. secondary rectification and freewheeling for superfast switching UL Flammability Classification Rating 94V-0 speed AC-DC and DC-DC converters in high temperature conditions Moisture Sensitivity: Level 1 per J-STD-020 for consumer applications. Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 DC-DC Converters Polarity: Cathode Band AC-DC Adaptors/Chargers Weight: 0.064 grams (Approximate) Inverters SMA Schematic View Top View Bottom View Ordering Information (Note 4) Part Number Qualification Case Packaging HS1D-13 Commercial SMA 5,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See HS1D Maximum Ratings and Electrical Characteristics ( T = +25C unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage 200 V V RWM DC Blocking Voltage V R Average Rectified Output Current T = +88C (Note 5) I 1.0 A C O Non-Repetitive Peak Forward Surge Current 40 A I FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit 50 Typical Thermal Resistance Junction to Terminal (Note 6) C/W R JT Typical Thermal Resistance Junction to Ambient (Note 6) 92 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V 200 V I = 10A (BR)R R I = 1A, T = +25C 0.87 1.1 F A Forward Voltage Drop V 0.91 1.2 V F IF = 1.5A, TA = +25C 0.71 I = 1A, T = +125C F A 0.02 5 V = 200V, T = +25C R A Leakage Current (Note 7) A IR 1.2 100 V = 200V, T = +125C R A Reverse Recovery Time t 12 15 ns I = 0.5A, I = 1.0A, I = 0.25A RR F R RR Total Capacitance C 16 pF V = 4.0V , f = 1MHz T R DC Notes: 5. Device mounted on FR-4 substrate, 1 x 1 , 2oz, single-sided, PC boards with 0.1 x 0.15 copper pad. 6. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz, single-sided, PC boards with 0.2 x 0.25 copper pad. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 HS1D March 2018 Diodes Incorporated www.diodes.com Document number: DS39677 Rev. 3 - 2