VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES Package type: surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 AEC-Q101 qualified Peak wavelength: = 940 nm p High reliability High radiant power High radiant intensity High speed Angle of half sensitivity: = 60 Low forward voltage 21531 Suitable for high pulse current operation 0805 standard surface-mountable package Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION Lead (Pb)-free reflow soldering VSMB1940X01 is an infrared, 940 nm emitting diode in Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic APPLICATIONS package for surface mounting (SMD). High speed IR data transmission High power emitter for low space applications High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMB1940X01 6 60 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB1940X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 9, J-STD-020 T 260 C sd Thermal resistance junction / ambient JESD 51 R 270 K/W thJA Rev. 1.5, 30-Jun-16 Document Number: 81933 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMB1940X01 www.vishay.com Vishay Semiconductors 180 120 160 100 140 120 80 100 60 R = 270 K/W 80 thJA R = 270 K/W thJA 60 40 40 20 20 0 0 0 102030405060708090 100 020 40 60 80 100 T - Ambient Temperature (C) 21533 T - Ambient Temperature (C) 21532 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.15 1.35 1.6 V F p F Forward voltage I = 1 A, t = 100 s V -2.2 - V F p F I = 1 mA TK --1.5- mV/K F VF Temperature coefficient of V F I = 100 mA TK --1.1- mV/K F VF Reverse current V = 5 V I - - 10 A R R V = 0 V, f = 1 MHz, R Junction capacitance C -70 - pF J 2 E = 0 mW/cm I = 100 mA, t = 20 ms I 36 12 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I -60 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms e- 40 - mW F p I = 1 mA TK - -1.1 - %/K F e Temperature coefficient of radiant power I = 100 mA TK - -0.51 - %/K F e Angle of half intensity - 60 - deg Peak wavelength I = 30 mA - 940 - nm F p Spectral bandwidth I = 30 mA -25 - nm F Temperature coefficient of I = 30 mA TK -0.25- nm p F p Rise time I = 100 mA, 20 % to 80 % t -15 - ns F r Fall time I = 100 mA, 20 % to 80 % t -15 - ns F f Virtual source diameter d - 0.5 - mm Rev. 1.5, 30-Jun-16 Document Number: 81933 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F