DATA SHEET www.onsemi.com 1 2 High-Speed Switching CATHODE ANODE Diode 1SS400T1G, NSV1SS400T1G 1 SOD523 Features CASE 502 HighSpeed Switching Applications PLASTIC Lead Finish: 100% Matte Sn (Tin) Qualified Maximum Reflow Temperature: 260C MARKING DIAGRAM Extremely Small SOD523 Package NSV Prefix for Automotive and Other Applications Requiring A M Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS A = Device Code Compliant M = Date Code* = PbFree Package MAXIMUM RATINGS (T = 25C) (Note: Microdot may be in either location) A Rating Symbol Max Unit *Date Code orientation may vary depending upon manufacturing location. Reverse Voltage V 100 V R Forward Current I 200 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) ORDERING INFORMATION THERMAL CHARACTERISTICS Device Package Shipping Characteristic Symbol Max Unit 1SS400T1G SOD523 3000 / Tape & Reel Total Device Dissipation P D (PbFree) FR5 Board (Note 1) T = 25C 200 mW A Derate above 25C 1.57 mW/C 1SS400T5G SOD523 8000 / Tape & Reel (PbFree) Thermal Resistance, Junction-to-Ambient R 635 C/W JA NSV1SS400T1G SOD523 3000 / Tape & Reel Junction and Storage Temperature Range T , T 55 to C J stg +150 (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the NSV1SS400T5G SOD523 8000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. FR4 Minimum Pad. ELECTRICAL CHARACTERISTICS (T = 25C) A For information on tape and reel specifications, including part orientation and tape sizes, please Characteristic Symbol Min Max Unit refer to our Tape and Reel Packaging Specification OFF CHARACTERISTICS Brochure, BRD8011/D. Reverse Voltage Leakage Current I R (V = 80 Vdc) 0.1 Adc R Diode Capacitance C D (V = 0 V, f = 1.0 MHz) 3.0 pF R Forward Voltage V F (I = 100 mAdc) 1.2 Vdc F Reverse Recovery Time t rr (I = I = 10 mAdc) 4.0 ns F R Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2021 Rev. 10 1SS400T1/D1SS400T1G, NSV1SS400T1G 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 100 10 T = 150C A T = 85C A T = 125C A T = -40C A 1.0 10 T = 85C A 0.1 T = 25C A 1.0 T = 55C A 0.01 T = 25C A 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 V , REVERSE VOLTAGE (VOLTS) R Figure 4. Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , DIODE CAPACITANCE (pF) D I , REVERSE CURRENT ( A) R