1SS400TE61 ROHM

Data Sheet Switching Diode 1SS400 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) High speed switching 0.80.05 0.120.05 0.8 Features 1)Ultra small mold type. (UMD2) 2)High reliability EMD2 Construction 0.30.05 Silicon epitaxial planar Structure 0.60.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping dimensions (Unit : mm) 0.20.05 1.50.05 4.00.1 2.00.05 0.2 0.5 0.950.06 4.00.1 2.00.05 Empty pocket 0.760.05 0 Absolute maximum ratings (Ta=25 C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 90 V RM Reverse voltage (DC) V 80 V R Forward voltage(repetitive peak) I 225 mA FM Average rectified forward current Io 100 mA Surge current(t=1s) I 500 mA surge Junction temperature 125 Tj C Storage temperature 55 to 125 Tstg C Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 1.2 V I =100mA F F I Reverse current - - 0.1 A V =80V R R Capacitance between terminals Ct - - 3 pF V =0.5V , f=1MHz R Reverse recovery time trr - - 4 ns V =6V , IF=10mA , RL=100 R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.D 1/2 2.450.1 1.30.06 0 1.20.05 1.60.1 0.6 3.50.05 1.750.1 8.00.15 0.6 1.260.05 0 1.7Data Sheet 1SS400 10 100000 100 f=1MHz Ta=75 Ta=125 10000 Ta=125 10 Ta=75 1000 Ta=25 1 1 100 Ta=25 Ta= 25 10 0.1 Ta= 25 1 0.01 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 5 10 15 0 20 40 60 80 100 120 REVERSE VOLTAGE : V (V) REVERSE VOLTAGE : V (V) R FORWARD VOLTAGE : V (V) R F V -I CHARACTERISTICS V -Ct CHARACTERISTICS R R R V -I CHARACTERISTICS F F 100 1 950 Ta=25 Ta=25 0.9 Ta=25 V =80V V =0.5V R R I =100mA F 940 80 0.8 n=30pcs f=1MHz n=30pcs n=10pcs 0.7 930 60 0.6 AVE:0.698pF 0.5 920 40 0.4 AVE:930.3mV AVE:12.47nA 0.3 20 910 0.2 0.1 900 0 0 V DISPERSION MAP F I DISPERSION MAP Ct DISPERSION MAP R 20 100 5 Ta=25 Ifsm 1cyc V =6V R 4 I =10mA F 15 RL=100 8.3ms 10 Irr=0.1*I R 3 n=10pcs 10 2 AVE:1.20ns AVE:4.05A 1 Ifsm 5 1 8.3m 8.3m 1cyc 0 0 0.1 1 10 100 I DISPERSION MAP FSM NUMBER OF CYCLES trr DISPERSION MAP I -CYCLE CHARACTERISTICS FSM 10 1000 100 Rth(j-a) 9 AVE:6.43kV 8 7 10 100 Rth(j-c) 6 Mounted on epoxy board 5 4 AVE:1.58kV IM=1mA I =10mA F 1 10 3 Ifsm time 2 1ms t 300us 1 C=200pF C=100pF 0 0.1 1 R=0 R=1.5k 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(s) ESD DISPERSION MAP I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.06 - Rev.D PEAK SURGE PEAK SURGE FORWARD VOLTAGE : V (mV) F FORWARD CURRENT : I (mA) F FORWARD CURRENT : I (A) FSM FORWARD CURRENT : I (A) FSM TRANSIENT REVERSE CURRENT : I (nA) R REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT : I (nA) R THAERMAL IMPEDANCE:Rth (/W) ELECTROSTATIC PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN DISCHARGE TEST ESD(KV) FORWARD CURRENT : I (A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) FSM