X-On Electronics has gained recognition as a prominent supplier of 2SA1514KFRAT146 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1514KFRAT146 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1514KFRAT146 ROHM

2SA1514KFRAT146 electronic component of ROHM
2SA1514KFRAT146 ROHM
2SA1514KFRAT146 Bipolar Transistors - BJT
2SA1514KFRAT146 Semiconductors

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See Product Specifications
Part No. 2SA1514KFRAT146
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: 120V 200mW 50mA PNP SOT-346 Bipolar Transistors - BJT ROHS
Datasheet: 2SA1514KFRAT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.348 ea
Line Total: USD 0.35 
Availability - 19
Ship by Fri. 31 Jan to Wed. 05 Feb
MOQ: 1  Multiples: 1
Pack Size: 1

 2SA1514KFRAT146 More Buying Options & Price Grid(s)

Availability Price Quantity
19
Ship by Fri. 31 Jan to Wed. 05 Feb
MOQ : 1
Multiples : 1
1 : USD 0.348
10 : USD 0.2837
30 : USD 0.256
100 : USD 0.2216
500 : USD 0.2061
1000 : USD 0.194

Specifications

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1514KFRAT146 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1514KFRAT146 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

2SA1514K FRA High-voltage Amplifier Transistor Datasheet (-120V,-50mA) AEC-Q101 Qualified llOutline SOT-346 Parameter Value SC-59 V -120V CEO I -50mA C SMT3 llFeatures llInner circuit 1)High breakdown voltage. (BV =-120V) CEO 2)Complements the 2SC3906K FRA llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 2SA1514K FRA 2928 T146 180 8 3000 R (SMT3) www.rohm.com 1/6 20180622 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. 2SA1514K FRA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -120 V CBO V Collector-emitter voltage -120 V CEO V Emitter-base voltage -5 V EBO I Collector current -50 mA C *1 Power dissipation P 200 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -120 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -120 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E Collector cut-off current I V = -100V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -10mA, I = -1mA - - -500 mV CE(sat) C B h DC current gain V = -6V, I = -2mA 180 - 390 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 3.2 - pF ob f = 1MHz hFE values are calssified as follows : rank R - - - - h 180-390 - - - - FE *1 Each terminal mounted on a reference land. www.rohm.com 2/6 2018 ROHM Co., Ltd. All rights reserved. 20180622 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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