1SS398TE85LF Toshiba

1SS398 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS398 Unit: mm High-Voltage, High-Speed Switching Applications Small package : SC-59 Low forward voltage : V = 1.0 V (typ.) F(2) Fast reverse recovery time : t = 0.5 s (typ.) rr Small total capacitance : C = 2.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 420 V RM Reverse voltage V 400 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 2 * A FSM Power dissipation P (Note 1, 3) 200 mW D P (Note 2) 150 D Junction temperature T (Note 1) 150 j C T (Note 2) 125 JEDEC TO-236MOD j JEITA SC-59 Storage temperature range T (Note 1) 55 to 150 stg C TOSHIBA 2-3F1S T (Note 2) 55 to 125 stg Weight: 12 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) *: Unit rating. Total rating = unit rating 0.7 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.8 F (1) F Forward voltage V V I = 100 mA 1.0 1.3 F (2) F I V = 300 V 0.05 R (1) R Reverse current A I V = 400 V 0.1 R (2) R Total capacitance C V = 0 V, f = 1 MH 2.5 5.0 pF T R z Reverse recovery time t 0.5 s rr I = 10 mA (Fig.1) F Start of commercial production 1995-10 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS398 100s Fig.1 Reverse recovery time (t ) test circuit rr Equivalent Circuit (Top View) Marking 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation