Product Information

1SS399TE85LF

1SS399TE85LF electronic component of Toshiba

Datasheet
Diodes - General Purpose, Power, Switching 0.1A 400V Switching High-Speed Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6622 ea
Line Total: USD 0.66

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

1SS399TE85LF
Toshiba

1 : USD 0.4174
10 : USD 0.3531
100 : USD 0.2484
500 : USD 0.199
1000 : USD 0.1702
3000 : USD 0.1472
9000 : USD 0.1438
24000 : USD 0.1414
45000 : USD 0.138

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

1SS399 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS399 High Voltage Switching Applications Unit: mm Small package : SC-61 Low forward voltage : V = 1.0 V (typ.) F(2) Fast reverse recovery time : t = 0.5 s (typ.) rr Small total capacitance : C = 2.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 420 V RM Reverse voltage V 400 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O 1. CATHODE 1 2. CATHODE 2 Surge current (10ms) I 2 * A FSM 3. ANODE 2 P (Note 1, 3) 200 D SMQ 4. ANODE 1 Power dissipation mW P (Note 2) 150 D JEDEC T (Note 1) 150 j JEITA SC-61 Junction temperature C T (Note 2) 125 j TOSHIBA 1-3J1S Weight: 13 mg (typ.) T (Note 1) 55 to 150 stg Storage temperature range C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 2 Note 3: Total rating, Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 1.215 mm 3 + 1.15 mm ) *: Unit rating. Total rating = Unit rating 1.5. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.8 F (1) F Forward voltage V V I = 100 mA 1.0 1.3 F (2) F I V = 300 V 0.05 R (1) R Reverse current A I V = 400 V 0.1 R (2) R Total capacitance C V = 0 V, f = 1 MH 2.5 5.0 pF T R z Reverse recovery time trr IF = 10 mA (Fig.1) 0.5 s Start of commercial production 1995-11 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS399 100s Fig.1 Reverse recovery time (t ) test circuit rr Equivalent Circuit (top view) 2 1 3 4 Marking 2 1 A 6 3 4 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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