1SS361,LJ(CT Toshiba

1SS361CT TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361CT Ultra High Speed Switching Application Unit: mm Small z package z Low forward voltage: V = 0.9 V (typ.) F (3) z Fast reverse recovery time: t = 1.6 ns (typ.) rr z Small total capacitance: C = 0.9 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 85 V RM TOP VIEW Reverse voltage V 80 V R Maximum (peak) forward current I 300* mA FM 1.Anode1 Average forward current I 100* mA O 2.Anode2 Surge current (10ms) I 2* A FSM CST3 3.Cathode Power dissipation P 100** mW Junction temperature T 150 C j Storage temperature T 55 to 150 C JEDEC stg JEITA *: Unit rating. Total rating = Unit rating 1.5 TOSHIBA 1-1S1S **: Mounted on FR4 board (10 mm 10 mm 1 mm (t)) Weight: 0.75 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.60 F (1) F Forward voltage V V I = 10 mA 0.72 F (2) F V I = 100 mA 0.90 1.2 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 3.0 pF T R Reverse recovery time t I = 10 mA, Fig.1 1.6 ns rr F Start of commercial production 2004-08 1 2014-03-01 1SS361CT Fig.1 Reverse Recovery Time (t ) Test Circuit rr Marking 1 3 83 2 2 2014-03-01