1SS370TE85LF Toshiba

1SS370 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 Unit: mm High Voltage, High Speed Switching Applications Small package : SC-70 Low forward voltage : V = 0.9 V (typ.) F (2) Fast reverse recovery time : t = 60 ns (max) rr Small total capacitance : C = 1.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V V RM 250 Reverse voltage V V R 200 Maximum (peak) forward current I mA FM 300 Average forward current I mA O 100 USM Surge current (10ms) I A FSM 2 JEDEC P (Note 1, 3) 200 D Power dissipation mW JEITA SC70 P (Note 2) 100 D TOSHIBA 1-2P1D T (Note 1) 150 j Junction temperature C Weight: 0.006g (typ.) T (Note 2) 125 j T (Note 1) 55 to 150 stg Storage temperature C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.5 mm 3) Start of commercial production 1993-09 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS370 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.72 1.0 F (1) F Forward voltage V V I = 100 mA 0.90 1.2 F (2) F I V = 50 V 0.1 R (1) R Reverse current A I V = 200 V 1.0 R (2) R Total capacitance C V = 0 V, f = 1 MH 1.5 3.0 pF T R z Reverse recovery time t I = 10 mA, Fig.1 10 60 ns rr F Marking Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation