1SS387,H3F Toshiba

1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm AEC-Q101 Qualified (Note1) Compact 2-pin package ideal for high-density mounting Low forward voltage : V = 0.98 V (typ.) F (3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Small total capacitance : C = 0.5 pF (typ.) T Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V V RM 85 Reverse voltage V V R 80 Maximum (peak) forward current I mA FM 200 Average forward current I mA O 100 JEDEC Surge current (10ms) I A FSM 1 JEITA PD (Note 2, 4) 200 TOSHIBA 1-1G1A Power dissipation mW P (Note 3, 4) 150 D Weight: 1.4mg (typ) T (Note 2) 150 j Junction temperature C T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in LF(T. Note 3: For devices with the ordering part number in other than LF(T. Note 4: Mounted on a glass epoxy circuit board of 20 mm 20 mm, pad dimension of 4 mm 4mm. Start of commercial production 1994-11 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS387 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.62 F (1) F Forward voltage V I = 10 mA 0.75 V F (2) F V I = 100 mA 0.98 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MH 0.5 3.0 pF T R z Reverse recovery time t I = 10 mA, Fig.1 1.6 4.0 ns rr F Fig.1 Reverse Recovery Time (t ) Test Circuit rr Equivalent circuit (Top View) Marking 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation