1SS392(TE85L,F) Toshiba

1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm Low forward voltage : V = 0.54V (typ.) F (3) Low reverse current : I = 5A (max) R Small package : SC-59 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 150 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC TO-236MOD Operating temperature range T 40 to 100 C opr JEITA SC-59 TOSHIBA 2-3F1S Note: Using continuously under heavy loads (e.g. the application of high Weight: 12 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Unit rating. Total rating = unit rating 1.5 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 F (2) F V V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 R R A Total capacitance C V = 0 V, f = 1MH 18 25 pF T R z Start of commercial production 1994-12 1 2017-10-12 1SS392 Equivalent Circuit (Top View) Marking f = 1 MHz T = 25 C a 2 2017-10-12