1SS374(TE85L,F) Toshiba

1SS374 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS374 High Speed Switching Application Unit: mm AEC-Q101 Qualified (Note1) Low forward voltage : VF(2) = 0.23V (typ.) Small package : SC-59 Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 150 mW JEDEC TO-236MOD Junction temperature T 125 C j JEITA SC-59 TOSHIBA 2-3F1S Storage temperature range T 55 to 125 C stg Weight: 12 mg (typ.) Operating temperature range T 40 to 100 C opr Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Unit rating. Total rating = unit rating 0.7 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.18 F (1) F Forward voltage V I = 5mA 0.23 0.30 V F (2) F V I = 100mA 0.35 0.50 F (3) F Reverse current I V = 10V 20 A R R Total capacitance C V = 0 V, f = 1MH 20 40 pF T R z Marking Equivalent Circuit (top View) Start of commercial production 1993-04 1 2017-10-30 1SS374 2 2017-10-30