X-On Electronics has gained recognition as a prominent supplier of 1SS382TE85LF Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1SS382TE85LF Diodes - General Purpose, Power, Switching are a product manufactured by Toshiba. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1SS382TE85LF Toshiba

1SS382TE85LF electronic component of Toshiba
1SS382TE85LF Toshiba
1SS382TE85LF Diodes - General Purpose, Power, Switching
1SS382TE85LF  Semiconductors

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See Product Specifications
Part No. 1SS382TE85LF
Manufacturer: Toshiba
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 0.1A 80V Switching High-Speed Diode
Datasheet: 1SS382TE85LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3487 ea
Line Total: USD 0.35 
Availability - 3920
Ship by Thu. 03 Apr to Mon. 07 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3920
Ship by Thu. 03 Apr to Mon. 07 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3487
10 : USD 0.2212
100 : USD 0.1164
500 : USD 0.0957
1000 : USD 0.0913
3000 : USD 0.0638
6000 : USD 0.0638
9000 : USD 0.0627
24000 : USD 0.0605

2652
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 435
Multiples : 1
435 : USD 0.1495
500 : USD 0.1365
1000 : USD 0.1229
2000 : USD 0.1149

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1SS382TE85LF from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS382TE85LF and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1SS382 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Unit: mm Ultra High Speed Switching Application Small package Composed of 2 independent diodes. Low forward voltage : V = 0.92 V (typ.) F (3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V V RM 85 Reverse voltage V 80 V R Maximum (peak) forward current I mA FM 300 * Average forward current I mA O 100 * Surge current (10ms) I A FSM 2 * PD (Note 1, 3) 125 Power dissipation mW P (Note 2, 3) 100 D T (Note 1) 150 j Junction temperature C JEDEC T (Note 2) 125 j JEITA T (Note 1) 55 to 150 stg Storage temperature C TOSHIBA 1-2U1A T (Note 2) 55 to 125 stg Weight: 0.006g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Total rating. *: Unit rating. Total rating = Unit rating 1.5. Start of commercial production 1994-09 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS382 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.61 F (1) F Forward voltage V I = 10 mA 0.74 V F (2) F V I = 100 mA 0.92 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 2.0 pF T R Reverse recovery time t I = 10 mA, Fig.1 1.6 4.0 ns rr F Pin Assignment (Top View) Marking 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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