1SS383(TE85L,F) Toshiba

1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: V = 0.54V (typ.) F (3) Low reverse current: I = 5 A (max) R Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 100 * mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC JEITA Operating temperature range T 40 to 100 C opr TOSHIBA 1-2U1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.006g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 V F (1) F Forward voltage V I = 10mA 0.36 V F (2) F V I = 100mA 0.54 0.60 V F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0, f = 1MH 18 25 pF T R z Pin Assignment (Top View) Marking Start of commercial production 1994-09 1 2015-01-15 1SS383 1.4 Ambient temperature Ta (C) 2 2015-01-15 Power Dissipation P (mW)