1SS385(TE85L,F) Toshiba

1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm z Low forward voltage: V = 0.23V (typ.) I = 5mA F (2) F z Small package Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 100 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-2S1B temperature/current/voltage and the significant change in temperature, Weight: 2.4mg (typ.) etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.18 V F (1) F Forward voltage VF (2) IF = 5mA 0.23 0.30 V V I = 100mA 0.35 0.50 V F (3) F Reverse current I V = 10V 20 A R R Total capacitance C V = 0, f = 1MH 20 40 pF T R z Equivalent Circuit (Top View) Marking Start of commercial production 1994-10 1 2014-03-01 1SS385 2 2014-03-01