1SS384TE85LF Toshiba

1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Composed of 2 independent diodes. Low forward voltage: V = 0.23V (typ.) I = 5mA F (2) F Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 100 * mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C USQ stg Operating temperature range T 40 to 100 C opr JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2K1S temperature/current/voltage and the significant change in temperature, Weight: 0.006g (typ.) etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.18 F (1) F Forward voltage V I = 5mA 0.23 0.30 V F (2) F V I = 100mA 0.35 0.50 F (3) F Reverse current I V = 10V 20 A R R Total capacitance C V = 0 V, f = 1MH 20 40 pF T R z Pin Assignment (Top View) Marking Start of commercial production 1994-09 1994-2018 1 2018-09-07 Toshiba Electronic Devices & Storage Corporation 1SS384 1994-2018 2 2018-09-07 Toshiba Electronic Devices & Storage Corporation