1SS378(TE85L,F) Toshiba

1SS378 TOSHIBA Diode Silicon Epitaxial Planar Schottky Barrier Type 1SS378 High Speed Switching Unit: mm z Low forward voltage : V = 0.23V (typ.) I = 5mA F F z Small package : SC-70 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 * mA FM Average forward current I 100 * mA O Surge current (10ms) I 1 * A FSM Power dissipation P 100 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Operating temperature range T 40 to 100 C opr JEDEC JEITA SC-70 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-2P1B temperature/current/voltage and the significant change in Weight: 0.006g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min. Typ. Max. Unit Circuit V I = 1mA 0.18 F (1) F V Forward voltage V I = 5mA 0.23 0.30 F (2) F V V I = 100mA 0.35 0.50 F (3) F V Reverse current I V = 10V 20 R R A Total capacitance C V = 0, f = 1MH 20 40 pF T R z Equivalent Circuit (Top View) Marking Start of commercial production 1993-12 1 2014-03-01 1SS378 2 2014-03-01