X-On Electronics has gained recognition as a prominent supplier of 1SS381,L3F PIN Diodes across the USA, India, Europe, Australia, and various other global locations. 1SS381,L3F PIN Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for PIN Diodes, ensuring timely deliveries around the world.

1SS381,L3F Toshiba

1SS381,L3F electronic component of Toshiba
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Part No. 1SS381,L3F
Manufacturer: Toshiba
Category: PIN Diodes
Description: PIN Diodes Radio-Freq Switch 30V Vr 0.7pF .6ohm
Datasheet: 1SS381,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.0516 ea
Line Total: USD 412.8 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 8000
Multiples : 8000
8000 : USD 0.0516
24000 : USD 0.0504
48000 : USD 0.0479
96000 : USD 0.0479

   
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We are delighted to provide the 1SS381,L3F from our PIN Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS381,L3F and other electronic components in the PIN Diodes category and beyond.

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1SS381 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS381 VHF Tuner Band Switch Applications Unit: mm Small package Small total capacitance: C = 1.2 pF (max) T Low series resistance: r = 0.6 (typ.) s Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 30 V R Forward current I 100 mA F Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 1-1G1A Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.0014 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Forward voltage V I = 2 mA 0.85 V F F Reverse current I V = 15 V 0.1 A R R Reverse voltage V I = 1 A 30 V R R Total capacitance C V = 6 V, f = 1 MHz 0.7 1.2 pF T R Series resistance r I = 2 mA, f = 100 MHz 0.6 0.9 s F Marking Start of commercial production 1994-07 1 2014-03-01 1SS381 2 2014-03-01

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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