1SS319(TE85L,F) Toshiba

1SS319 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS319 Low Voltage High Speed Switching Unit: mm Small package: SC-61 Low forward voltage: V (3) = 0.54V (typ.) F Low reverse current: I = 5 A (max) R Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 * mA FM 1. CATHODE 1 Average forward current I 100 * mA O 2. CATHODE 2 Power dissipation P 150 * mW 3. ANODE 2 Junction temperature T 125 C j 4. ANODE 1 SMQ Storage temperature T 55 to 125 C stg JEDEC JEITA SC61 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA temperature/current/voltage and the significant change in 1 3J1S temperature, etc.) may cause this product to decrease in the Weight: 13 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 F (2) F V V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 R R A Total capacitance C V = 0V , f = 1MHz 18 25 T R pF Start of commercial production 1987-06 1 2020-12-01 2020 Toshiba Electronic Devices & Storage Corporation 1SS319 Equivalent circuit (Top view) 2 1 3 4 Marking 2 1 3 4 2 2020-12-01 2020 Toshiba Electronic Devices & Storage Corporation