1SS362TE85LF Toshiba

1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Unit: mm Ultra High Speed Switching Application Small package Low forward voltage : V = 0.97 V (typ.) F(3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Small total capacitance : C = 0.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I mA FM 240 * Average forward current I mA O 80 * Surge current (10ms) I A FSM 1 * PD (Note 1, 3) 120 Power dissipation mW P (Note 2) 100 D T (Note 1) 150 j Junction temperature C T (Note 2) 125 j SSM T (Note 1) 55 to 150 stg JEDEC Storage temperature C T (Note 2) 55 to 125 stg JEITA TOSHIBA 1-2S1C Note: Using continuously under heavy loads (e.g. the application of high Weight: 2.4 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.36 mm 3) *: Unit rating. Total rating = Unit rating 1.5. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.63 F (1) F Forward voltage V I = 10 mA 0.75 F (2) F V V I = 100 mA 0.97 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.5 3.0 pF T R Reverse recovery time t I = 10 mA, Fig.1 1.6 4.0 ns rr F Start of commercial production 1990-10 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS362 Marking Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation